EPITAXIAL-GROWTH OF SILICON BY CVD IN A HOT-WALL FURNACE

被引：19
|
作者：
BLOEM, J
OEI, YS
DEMOOR, HHC
HANSSEN, JHL
GILING, LJ
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期
关键词：
D O I：
10.1149/1.2114264
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1973 / 1980
页数：8
相关论文
共 50 条
  • [1] MODELING OF A HIGH THROUGHPUT HOT-WALL REACTOR FOR SELECTIVE EPITAXIAL-GROWTH OF SILICON
    GALEWSKI, C
    OLDHAM, WG
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1992, 5 (03) : 169 - 179
  • [2] EPITAXIAL-GROWTH OF CDTE ON GAAS BY HOT-WALL EPITAXY
    SHIN, YJ
    JEONG, TS
    SHIN, HK
    KIM, TS
    LEE, H
    KANG, SK
    LEE, TS
    HONG, KJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1995, 28 : S140 - S144
  • [3] EPITAXIAL-GROWTH OF CADMIUM FILMS BY THE HOT-WALL TECHNIQUE
    KULKARNI, AV
    BOSE, S
    PRATAP, R
    THIN SOLID FILMS, 1984, 120 (01) : L73 - L77
  • [4] Uniformity improvement in SiC epitaxial growth by horizontal hot-wall CVD
    Saitoh, H
    Kimoto, T
    Matsunami, H
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 185 - 188
  • [5] Hot-wall and cold-wall environments for silicon epitaxial film growth
    Habuka, H
    JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) : 145 - 155
  • [6] Growth of SiC by Hot-Wall CVD and HTCVD
    Kordina, O.
    Hallin, C.
    Henry, A.
    Bergman, J. P.
    Physica Status Solidi (B): Basic Research, 202 (01):
  • [7] Growth of SiC by ''hot-wall'' CVD and HTCVD
    Kordina, O
    Hallin, C
    Henry, A
    Bergman, JP
    Ivanov, I
    Ellison, A
    Son, NT
    Janzen, E
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 202 (01): : 321 - 334
  • [8] HOT-WALL EPITAXIAL-GROWTH OF ZNSE ON S-PASSIVATED GAAS (100) SUBSTRATE
    CAI, WZ
    LI, ZS
    DING, XM
    HOU, XY
    WANG, J
    ZHU, CS
    SU, RZ
    WANG, X
    JOURNAL OF CRYSTAL GROWTH, 1994, 142 (3-4) : 397 - 399
  • [9] EPITAXIAL-GROWTH OF THIN GAAS-LAYERS BY HOT-WALL EPITAXY ON TRANSPARENT SUBSTRATES
    SADEGHI, M
    SITTER, H
    GRUBER, H
    JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 103 - 107
  • [10] Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD; effect of process parameters
    Forsberg, U.
    Danielsson, Ö.
    Henry, A.
    Linnarsson, M.K.
    Janzeán, E.
    Materials Science Forum, 2002, 389-393 (01) : 203 - 206
12345