LIF FILMS - PRODUCTION AND CHARACTERIZATION

被引:70
作者
MONTEREALI, RM
BALDACCHINI, G
MARTELLI, S
DOCARMO, LCS
机构
[1] CTR RIC CASACCIA,EUROPEAN NUCL ENERGY AGCY,DIPARTIMENTO TIB,I-00060 SANTA MARIA DIGAL,ITALY
[2] PONTIFICIA UNIV CATOLICA RIO DE JANEIRO,DEPT FIS,BR-22453 RIO DE JANEIRO,BRAZIL
关键词
D O I
10.1016/0040-6090(91)90175-W
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
LiF films were produced by thermal evaporation onto amorphous substrates kept (during evaporation) at temperatures ranging from ambient up to 350-degrees-C. The evolution through two polycrystalline states was analysed by X-ray diffraction techniques, which also revealed that the LiF film lattice parameter is equal to that of LiF crystal. The refractive index of the produces films was measured by transmission optical interferometry. Talisurf-6 profilometer measurements on the film surface show sharp edges and very smooth surfaces, which reflect the substrate surfaces.
引用
收藏
页码:75 / 83
页数:9
相关论文
共 6 条
  • [1] Al'tshuler G. B., 1987, Soviet Physics - Technical Physics, V32, P95
  • [2] AMORPHOUS THIN-FILMS OF ZN3P2
    DEISS, JL
    ELIDRISSI, B
    ROBINO, M
    TAPIERO, M
    ZIELINGER, JP
    WEIL, R
    [J]. PHYSICA SCRIPTA, 1988, 37 (04): : 587 - 592
  • [3] Martynovich E. F., 1988, Soviet Journal of Quantum Electronics, V18, P26, DOI 10.1070/QE1988v018n01ABEH010195
  • [4] EFFECT OF SUBSTRATE-TEMPERATURE ON THE CRYSTALLINE STATE OF BA2ERCU3O7-X SUPERCONDUCTING THIN-FILMS BY RF MAGNETRON SPUTTERING
    MOCHIKU, T
    KANKE, Y
    WEN, ZM
    IGUCHI, I
    YAMAKA, E
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1679 - L1682
  • [5] VALENTE LCG, 1987, CRYST LATT DEF AMORP, V16, P305
  • [6] WEAVER C, 1962, ADV PHYS, V42, P83