SI-DEFECT CONCENTRATIONS IN HEAVILY SI-DOPED GAAS - CHANGES INDUCED BY ANNEALING

被引：68
作者：
KUNG, JK
SPITZER, WG
机构：
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
[2] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 10期
关键词：
D O I：
10.1063/1.1663074
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4477 / 4486
页数：10
相关论文
共 39 条
[1]   ELECTRICAL ACTIVITY OF COPPER IN GAAS [J].
BLANC, J ;
WEISBERG, LR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :221-&
[2]   THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J].
DAWBER, PG ;
ELLIOTT, RJ .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521) :453-&
[3]   VIBRATIONS OF AN ATOM OF DIFFERENT MASS IN A CUBIC CRYSTAL [J].
DAWBER, PG ;
ELLIOTT, RJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 273 (1352) :222-+
[4]  
EDMUND JT, 1960, J APPL PHYS, V31, P1428
[5]  
ELLIOTT RJ, 1966, PHONONS PERFECT LATT, P377
[6]  
ELLIOTT RJ, 1967, J PHYS CHEM SOLIDS, V28, P1627
[7]   CHANGES IN ELECTRON CONCENTRATION OF DONOR-DOPED GAAS CRYSTALS CAUSED BY ANNEALING [J].
FULLER, CS ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2287-+
[8]  
GRISHINA SP, 1970, SOV PHYS SEMICOND+, V4, P240
[9]   OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].
HARRIS, JS ;
NANNICHI, Y ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&
[10]   PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS [J].
HWANG, CJ .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5347-&
1234