CARRIER LIFETIME VERSUS ION-IMPLANTATION DOSE IN SILICON ON SAPPHIRE

被引：169

作者：

DOANY, FE

GRISCHKOWSKY, D

CHI, CC

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.98173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：460 / 462

页数：3

共 15 条

[1]

Auston D, 1984, PICOSECOND OPTOELECT, P73, DOI DOI 10.1016/B978-0-12-440880-7.50008-0

[2] PICOSECOND PHOTOCONDUCTING HERTZIAN DIPOLES [J].

AUSTON, DH ;

CHEUNG, KP ;

SMITH, PR .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :284-286

[3] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[4] ULTRAFAST HEATING OF SILICON ON SAPPHIRE BY FEMTOSECOND OPTICAL PULSES [J].

DOWNER, MC ;

SHANK, CV .

PHYSICAL REVIEW LETTERS, 1986, 56 (07) :761-764

[5] GENERATION OF SUBPICOSECOND ELECTRICAL PULSES ON COPLANAR TRANSMISSION-LINES [J].

KETCHEN, MB ;

GRISCHKOWSKY, D ;

CHEN, TC ;

CHI, CC ;

DULING, IN ;

HALAS, NJ ;

HALBOUT, JM ;

KASH, JA ;

LI, GP .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :751-753

[6] OPTICAL HEATING OF ELECTRON-HOLE PLASMA IN SILICON BY PICOSECOND PULSES [J].

LOMPRE, LA ;

LIU, JM ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :3-5

[7]

LOMPRE LA, 1984, ULTRAFAST PHENOMENA, V4, P122

[8] SUBPICOSECOND ELECTRO-OPTIC SAMPLING USING COPLANAR STRIP TRANSMISSION-LINES [J].

MOUROU, GA ;

MEYER, KE .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :492-494

[9]

MOUROU GA, 1985, PICOSECOND ELECTRONI

[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

← 1 2 →