ENERGY-LEVELS OF SINGLE NONABRUPT GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：8

作者：

FERREIRA, EC ^{[1
]}

DACOSTA, JAP ^{[1
]}

FARIAS, GA ^{[1
]}

FREIRE, VN ^{[1
]}

机构：

[1] UNIV FED CEARA, DIPARTIMENTO FIS, BR-60455760 FORTALEZA, BRAZIL

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1995年 / 17卷 / 04期

关键词：

D O I：

10.1006/spmi.1995.1069

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Energy levels of electrons in nonabrupt GaAs/AlxGa1-xAs single quantum wells are calculated with and beyond the constant interfacial effective mass approximation (CIEMA), and compared with those of abrupt GaAs/AlxGa1-xAs quantum wells. For a given interface width, the energy levels calculated with the CIEMA are higher than those calculated beyond it, but both are higher than those of the abrupt semiconductor quantum well. The shifts of the energy levels increase with the interfacial width of the nonabrupt quantum well, as well as with the degree of interfacial asymmetry. (C) 1995 Academic Press Limited

引用

页码：397 / 400

页数：4

共 21 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES [J].

ALBREKTSEN, O ;

ARENT, DJ ;

MEIER, HP ;

SALEMINK, HWM .

APPLIED PHYSICS LETTERS, 1990, 57 (01) :31-33

[3] CALCULATION OF TRANSMISSION TUNNELING CURRENT ACROSS ARBITRARY POTENTIAL BARRIERS [J].

ANDO, Y ;

ITOH, T .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1497-1502

[4] SPACE-CHARGE EFFECTS ON ELECTRON TUNNELING [J].

BENDANIEL, DJ ;

DUKE, CB .

PHYSICAL REVIEW, 1966, 152 (02) :683-+

[5] EFFECTIVE-MASS THEORY FOR ABRUPT HETEROSTRUCTURES [J].

BREZINI, A ;

SEBBANI, M .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1993, 178 (01) :141-149

[6] THE JUSTIFICATION FOR APPLYING THE EFFECTIVE-MASS APPROXIMATION TO MICROSTRUCTURES [J].

BURT, MG .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (32) :6651-6690

[7]

FERREIRA E, UNPUB

[8]

FILHO JR, IN PRESS SOLID STATE

[9]

Freire V. N., 1992, 5th Brazilian School. Semiconductor Physics, P356

[10] RESONANT PEAKS IN THE TRANSMISSION COEFFICIENT OF COMPOSITIONALLY NONABRUPT GAAS/ALXGA1-X AS HETEROJUNCTIONS [J].

FREIRE, VN ;

AUTO, MM ;

FARIAS, GA .

SUPERLATTICES AND MICROSTRUCTURES, 1992, 11 (01) :17-22

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