CHEMICAL ETCHANT FOR SELECTIVE REMOVAL OF GAAS THROUGH SIO2 MASKS

被引：42

作者：

GANNON, JJ ^{[1
]}

NUESE, CJ ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 09期

关键词：

D O I：

10.1149/1.2402016

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1215 / 1219

页数：5

共 13 条

[1] EVALUATION OF A NEW POLISH FOR GALLIUM ARSENIDE USING A PEROXIDE-ALKALINE SOLUTION [J].

DYMENT, JC ;

ROZGONYI, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1346-&

[2]

FAUST JW, 1962, PREPARATION 3 5 COMP, V1

[3] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J].

FULLER, CS ;

ALLISON, HW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) :880-880

[4] ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB [J].

GATOS, HC ;

LAVINE, MC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :169-&

[5] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].

GATOS, HC ;

LAVINE, MC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433

[6]

GOLDSMITH N, 1967, RCA REV, V28, P153

[7] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].

LIDA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :768-&

[8] GAAS VAPOR-GROWN BIPOLAR TRANSISTORS [J].

NUESE, CJ ;

GOSSENBERGER, HF ;

ENSTROM, RE ;

DEAN, RH ;

GANNON, JJ .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :81-+

[9]

NUESE CJ, 1972, NAS827086 CONTR

[10] ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK [J].

SHAW, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) :958-&

← 1 2 →