CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY-GROWN CUINSE2 ON GAAS(001)

被引：12

作者：

SHIODA, R

OKADA, Y

OYANAGI, H

NIKI, S

YAMADA, A

MAKITA, Y

机构：

[1] Electrotechnical Laboratory, Tsukuba-shi, Ibaraki, 305

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80128-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The structures of CuInSe2(CIS) grown on GaAs(001) by molecular beam epitaxy (MBE) were characterized by extended X-ray adsorption fine structure (EXAFS) for the local structure, changing the Cu/ln ratio systematically. Radial distributions around Cu and Se atoms change drastically as a function of the Cu/ln ratio, The results show that the ordered chalcopyrite phase is grown within a narrow composition range near the ideal stoichiometry. It is found that deviations from the stoichiometry in either direction cause a significant change in the local structure which results from the structural disorder and/or the phase separation. The temperature dependence of mean square relative displacement indicates the coexistence of Cu2Se in the Cu-rich region.

引用

页码：1196 / 1200

页数：5

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