ADSORPTION AND NUCLEATION OF HAFNIUM ON FACETS AND STEPPED SURFACE-AREAS OF TUNGSTEN

被引:4
作者
SZCZUDLO, Z
SENDECKA, K
GUBERNATOR, W
CISZEWSKI, A
机构
[1] Institute of Experimental Physics, University of Wrocław, 50-205 Wrocław
关键词
D O I
10.1016/0042-207X(94)90185-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The adsorption of Hf deposited from vapor in ultra-high vacuum onto thermally cleaned surfaces of W has been studied using field electron emission microscopy. Three-dimensional nucleation and two-dimensional layer formation on structurally and topographically different areas of the substrate were observed for various annealing temperatures and various amounts of The deposited adsorbate. The dependence of the average work function on the adsorbate coverage as well as on the structural and morphological changes of the adsorption layer, involved by annealing at various temperatures, has been measured
引用
收藏
页码:263 / 266
页数:4
相关论文
共 6 条
[1]  
[Anonymous], 1961, FIELD EMISSION FIELD
[2]  
Bauer E., 1958, Z KRISTALLOGR, V110, P372, DOI DOI 10.1524/ZKRI.1958.110.1-6.372
[3]   ADSORPTION AND NUCLEATION OF ZIRCONIUM ON TUNGSTEN FIELD EMITTERS [J].
COLLINS, RA ;
BLOTT, BH .
SURFACE SCIENCE, 1968, 10 (03) :349-&
[4]  
MECLEWSKI R, 1983, ACTA U WRATISL, V455, P119
[5]   NUCLEATION AND GROWTH OF CR ON STEPPED SURFACES WITH FACETS AN FEEM STUDY [J].
MELMED, AJ ;
SHINN, ND .
JOURNAL DE PHYSIQUE, 1987, 48 (C-6) :33-38
[6]   NUCLEATION AND EPITAXIAL-GROWTH OF CR CRYSTALS ON STEPPED-W SURFACES WITH LOW-INDEX FACETS [J].
MELMED, AJ ;
SHINN, ND .
SURFACE SCIENCE, 1988, 193 (03) :475-485