NUMERICAL-ANALYSIS OF FLARED SEMICONDUCTOR-LASER AMPLIFIERS

被引：70
作者：
LANG, RJ
HARDY, A
PARKE, R
MEHUYS, D
OBRIEN, S
MAJOR, J
WELCH, D
机构：
[1] Spectra Diode Laboratories, San José, CA 95134
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期
关键词：
D O I：
10.1109/3.234467
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A numerical model for flared semiconductor optical amplifiers is presented that incorporates the effects of gain and index saturation and thermal effects. Theoretical near fields, far fields, and quadratically phase-corrected far fields are presented. The results indicate that flared semiconductor laser amplifiers are capable of coherent diffraction-limited out-put powers in excess of 1 W CW.
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收藏
页码：2044 / 2051
页数：8
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