FILM THICKNESS DEPENDENCE OF CRITICAL CURRENT-DENSITY FOR YBA2CU3O7 FILMS POSTANNEALED AT A LOW OXYGEN PARTIAL-PRESSURE

被引：7
作者：
MOGROCAMPERO, A
TURNER, LG
机构：
[1] GE Research and Development Center, Schenectady, 12301-0008, New York
来源：
JOURNAL OF SUPERCONDUCTIVITY | 1993年 / 6卷 / 01期
关键词：
SUPERCONDUCTING FILMS; YBA2CU3O7; CRITICAL CURRENT DENSITY;
D O I：
10.1007/BF00618503
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The variation of critical current density at 77 K as a function of film thickness was studied for YBa2Cu3O7 films on (100) LaAlO3 substrates. Film thicknesses were in the range 0.2-1.6 mum. The films were deposited by co-evaporation and post-annealed under conditions which have previously resulted in high-quality films (750-degrees-C and an oxygen partial pressure of 29 Pa). The critical current density at 77 K exceeds 1 MA cm-2 for the thinner films, and decreases with increasing film thickness in excess of about 0.4 mum. The decrease is in rough agreement with a switch from c-axis to a-axis growth at about this critical thickness. A good anticorrelation was found between room temperature resistivity and critical current density at 77 K. The results are compared to those obtained before by post-annealing at 850-degrees-C in 1 atm of oxygen.
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收藏
页码：37 / 41
页数：5
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