FILM THICKNESS DEPENDENCE OF CRITICAL CURRENT-DENSITY FOR YBA2CU3O7 FILMS POSTANNEALED AT A LOW OXYGEN PARTIAL-PRESSURE

被引：7

作者：

MOGROCAMPERO, A

TURNER, LG

机构：

[1] GE Research and Development Center, Schenectady, 12301-0008, New York

来源：

JOURNAL OF SUPERCONDUCTIVITY | 1993年 / 6卷 / 01期

关键词：

SUPERCONDUCTING FILMS; YBA2CU3O7; CRITICAL CURRENT DENSITY;

D O I：

10.1007/BF00618503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The variation of critical current density at 77 K as a function of film thickness was studied for YBa2Cu3O7 films on (100) LaAlO3 substrates. Film thicknesses were in the range 0.2-1.6 mum. The films were deposited by co-evaporation and post-annealed under conditions which have previously resulted in high-quality films (750-degrees-C and an oxygen partial pressure of 29 Pa). The critical current density at 77 K exceeds 1 MA cm-2 for the thinner films, and decreases with increasing film thickness in excess of about 0.4 mum. The decrease is in rough agreement with a switch from c-axis to a-axis growth at about this critical thickness. A good anticorrelation was found between room temperature resistivity and critical current density at 77 K. The results are compared to those obtained before by post-annealing at 850-degrees-C in 1 atm of oxygen.

引用

页码：37 / 41

页数：5

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