HIGH-SPEED WAVE-GUIDE-INTEGRATED PHOTODIODES GROWN BY METAL ORGANIC MOLECULAR-BEAM EPITAXY

被引：13

作者：

EMEIS, N

SCHIER, M

HOFFMANN, L

HEINECKE, H

BAUR, B

机构：

[1] Siemens Research Laboratories, 8000 München 83

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 04期

关键词：

PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS; EPITAXY;

D O I：

10.1049/el:19920215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using InP/InGaAs layers grown by metal organic molecular beam epitaxy (MOMBE) on semi-insulating (SI) InP substrate we have fabricated waveguide-integrated pin-photodiodes working on the principle of evanescent field coupling. A 3 dB cutoff frequency of 9.6 GHz has been found in a 50-OMEGA system. The 100-mu-m long diodes exhibit a capacitance of < 0.1 pF at -5V bias. In addition design criteria are given to improve the speed of the devices.

引用

页码：344 / 345

页数：2

共 4 条

[1] GROWTH OF HIGH-QUALITY INP WITH METAL ORGANIC MOLECULAR-BEAM EPITAXY
HEINECKE, H
HOGER, R
BAUR, B
MIKLIS, A
ELECTRONICS LETTERS, 1990, 26 (03) : 213 - 214
[2] HIGH-PERFORMANCE PLANAR GAAS AL0.3 GA0.7AS SCHOTTKY-BARRIER PHOTODETECTOR GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
TZENG, YC
LI, SS
PENG, CK
KAO, YC
ELECTRONICS LETTERS, 1991, 27 (25) : 2379 - 2381
[3] High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
Pratiyush, Anamika Singh
Krishnamoorthy, Sriram
Solanke, Swanand Vishnu
Xia, Zhanbo
Muralidharan, Rangarajan
Rajan, Siddharth
Nath, Digbijoy N.
APPLIED PHYSICS LETTERS, 2017, 110 (22)
[4] Optical properties of high-Al-content crack free AlxGa1-xN (x < 0.67) films grown on Si(111) by molecular-beam epitaxy
Natali, F
Byrne, D
Leroux, M
Semond, F
Massies, J
SOLID STATE COMMUNICATIONS, 2004, 132 (10) : 679 - 682

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