THE INFLUENCE OF TUNGSTEN ALLOYING ADDITIONS ON THE PASSIVITY OF ALUMINUM

被引:104
作者
SHAW, BA
DAVIS, GD
FRITZ, TL
REES, BJ
MOSHIER, WC
机构
[1] MARTIN MARIETTA CORP LABS,BALTIMORE,MD 21227
[2] MARTIN MARIETTA SPACE SYST,DENVER,CO 80201
关键词
D O I
10.1149/1.2085404
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Transition metals such as Mo, W, Ta, Cr, and W can be used to significantly enhance the localized corrosion resistance of Al. Since these elements exhibit very low solubilities in aluminum, a nonequilibrium alloying method, such as sputter deposition, must be used to produce single-phase alloys. The addition of approximately 9 atom percent W to Al can shift its pitting potential in the positive direction as much as 2600 mV. Heat-treatment of these nonequilibrium alloys results in the precipitation of a second phase that is detrimental, but not catastrophic, to corrosion performance. Surface analysis of the Al-W passive film formed as a function of applied anodic potential reveals that it remains thin throughout the polarization sequence and contains very little oxidized solute, regardless of the applied potential. The oxidized W present in the film is in the form of WO2 and WO3 (or WO4(-2)). Previously, it was proposed that the enhanced passivity for sputter-deposited Al-Mo, Al-Cr, and Al-Ta alloys was a result of the oxidized solute in the film (MoO4(-2), CrOOH, or Ta2O5), making the film less susceptible to chloride attack by electrostatic-repulsion, oxide-structure modification, or oxidized-solute barrier-layer formation mechanisms. The results of this investigation reveal that the electrostatic-repulsion or oxidized-solute barrier-layer mechanisms are not responsible for the dramatic enhancement in the passivity of Al with the addition of W. Instead, the small amount of oxidized W in the passive film may interact synergistically with the hydrated aluminum oxide structure to form a more protective film.
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页码:3288 / 3295
页数:8
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