ROOM-TEMPERATURE ELECTRON TRAPPING IN AL0.35GA0.65AS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：30
作者：
NATHAN, MI
MOONEY, PM
SOLOMON, PM
WRIGHT, SL
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期
关键词：
D O I：
10.1063/1.96095
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：628 / 630
页数：3
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