MULTIPLE TWINS IN EPITAXIAL GALLIUM ARSENIDE

被引:4
作者
HOLLOWAY, H
BOBB, LC
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10.1063/1.1709993
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O59 [应用物理学];
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页码:2711 / &
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[1]   TRIPYRAMIDS AND ASSOCIATED DEFECTS IN EPITAXIAL SILICON LAYERS [J].
BOOKER, GR .
PHILOSOPHICAL MAGAZINE, 1965, 11 (113) :1007-&
[2]   STRUCTURAL IMPERFECTION IN VAPOUR-GROWN SILICON [J].
CHU, TL ;
GAVALER, JR .
PHILOSOPHICAL MAGAZINE, 1964, 9 (102) :993-&
[3]   ORIENTED GROWTH OF SEMICONDUCTORS .I. ORIENTATIONS IN GALLIUM ARSENIDE GROWN EPITAXIALLY ON GERMANIUM [J].
HOLLOWAY, H ;
WOLLMANN, K ;
JOSEPH, AS .
PHILOSOPHICAL MAGAZINE, 1965, 11 (110) :263-&
[4]   PREPARATION AND PROPERTIES OF GAAS-GAP, GAAS-GE, AND GAP-GE HETEROJUNCTIONS [J].
WEINSTEIN, M ;
BELL, RO ;
MENNA, AA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) :674-682