NATIVE OXIDES FORMED ON SINGLE-CRYSTAL GERMANIUM BY WET CHEMICAL-REACTIONS

被引：12

作者：

GREGORY, OJ

PRUITT, LA

CRISMAN, EE

ROBERTS, C

STILES, PJ

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[2] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 04期

关键词：

D O I：

10.1149/1.2095836

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：923 / 929

页数：7

共 19 条

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[2]

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[3] THE OXIDATION OF GERMANIUM SURFACES AT PRESSURES MUCH GREATER THAN ONE ATMOSPHERE [J].

CRISMAN, EE ;

ERCIL, YM ;

LOFERSKI, JJ ;

STILES, PJ .

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[4] THE NITRIDATION OF THICK GERMANIUM OXIDE-FILMS ON SINGLE-CRYSTAL GERMANIUM [J].

CRISMAN, EE ;

GREGORY, OJ ;

STILES, PJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) :1896-1900

[5]

CRISMAN EE, 1987, IEEE ELECTR DEVICE L, V23, P8

[6] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :527-533

[7]

EDWARDS JO, 1987, COMMUNICATION

[8]

GREGORY OJ, 1987, MATER RES SOC S P, V76, P307

[9]

GREGORY OJ, 1986, MATER RES SOC S P, V54, P593

[10]

GREGORY OJ, 1985, INTEGRATED CIRCUITS, pCH11

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