NATIVE OXIDES FORMED ON SINGLE-CRYSTAL GERMANIUM BY WET CHEMICAL-REACTIONS

[1] TETRAGONAL GERMANIUM DIOXIDE LAYERS ON GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 196 - +

[2] BREWER L, 1957, PHYS CHEM SOLIDS, V2, P284

[3] THE OXIDATION OF GERMANIUM SURFACES AT PRESSURES MUCH GREATER THAN ONE ATMOSPHERE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1845 - 1848

[4] THE NITRIDATION OF THICK GERMANIUM OXIDE-FILMS ON SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : 1896 - 1900

[5] CRISMAN EE, 1987, IEEE ELECTR DEVICE L, V23, P8

[6] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533

[7] EDWARDS JO, 1987, COMMUNICATION

[8] GREGORY OJ, 1987, MATER RES SOC S P, V76, P307

[9] GREGORY OJ, 1986, MATER RES SOC S P, V54, P593

[10] GREGORY OJ, 1985, INTEGRATED CIRCUITS, pCH11

[1] TETRAGONAL GERMANIUM DIOXIDE LAYERS ON GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 196 - +

[2] BREWER L, 1957, PHYS CHEM SOLIDS, V2, P284

[3] THE OXIDATION OF GERMANIUM SURFACES AT PRESSURES MUCH GREATER THAN ONE ATMOSPHERE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1845 - 1848

[4] THE NITRIDATION OF THICK GERMANIUM OXIDE-FILMS ON SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : 1896 - 1900

[5] CRISMAN EE, 1987, IEEE ELECTR DEVICE L, V23, P8

[6] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533

[7] EDWARDS JO, 1987, COMMUNICATION

[8] GREGORY OJ, 1987, MATER RES SOC S P, V76, P307

[9] GREGORY OJ, 1986, MATER RES SOC S P, V54, P593

[10] GREGORY OJ, 1985, INTEGRATED CIRCUITS, pCH11