SWITCHING OF THE CONDUCTIVITY IN SILICON MOS STRUCTURES BASED ON CERIUM DIOXIDE FILMS

被引：0
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作者：
ROZHKOV, VA
PETROV, AI
MILYUTKIN, EA
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来源：
SOVIET MICROELECTRONICS | 1984年 / 13卷 / 03期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：132 / 135
页数：4
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