A NEW HYDRO-FLUORINATED AMORPHOUS-SILICON PRODUCED BY USING INTERMEDIATE SPECIES SIF2

被引:15
作者
MATSUMURA, H [1 ]
FURUKAWA, S [1 ]
机构
[1] TOKYO INST TECHNOL,DEPT APPL ELECTR,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
关键词
D O I
10.1016/0022-3093(83)90277-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:739 / 742
页数:4
相关论文
共 7 条
[1]   THE DEPOSITION OF SILICON FILMS BY PYROLYTIC DECOMPOSITION OF SIF2 GAS [J].
JANAI, M ;
AFTERGOOD, S ;
WEIL, RB ;
PRATT, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (12) :2660-2665
[2]   HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS [J].
KAMPAS, FJ ;
GRIFFITH, RW .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :407-409
[3]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SI-F-H ALLOYS [J].
MADAN, A ;
OVSHINSKY, SR ;
BENN, E .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (04) :259-277
[4]  
MATSUMURA H, 1983, JPN J APPL PHYS S, V22, P523
[5]   NEW AMORPHOUS SILICON-BASED ALLOY FOR ELECTRONIC APPLICATIONS [J].
OVSHINSKY, SR ;
MADAN, A .
NATURE, 1978, 276 (5687) :482-484
[6]   LOW DEFECT DENSITY AMORPHOUS HYDROGENATED SILICON PREPARED BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION [J].
SCOTT, BA ;
REIMER, JA ;
PLECENIK, RM ;
SIMONYI, EE ;
REUTER, W .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :973-975
[7]  
WEIL R, 1981, 9TH P INT C ON LIQ S