IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES

被引：47

作者：

CAMRAS, MD

HOLONYAK, N

HESS, K

LUDOWISE, MJ

DIETZE, WT

LEWIS, CR

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] VARIAN ASSOCIATES INC,SOLID STATE LAB,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.93875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：185 / 187

页数：3

共 10 条

[1] THE GROWTH AND CHARACTERIZATION OF METALORGANIC CHEMICAL VAPOR-DEPOSITION (MO-CVD) QUANTUM WELL TRANSPORT STRUCTURES
COLEMAN, JJ
DAPKUS, PD
THOMPSON, DE
CLARKE, DR
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 207 - 212
[2] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION
COLEMAN, JJ
DAPKUS, PD
KIRKPATRICK, CG
CAMRAS, MD
HOLONYAK, N
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906
[3] DUPUIS RD, 1979, 1978 P INT S GAAS RE, P1
[4] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY
HOLONYAK, N
LAIDIG, WD
CAMRAS, MD
COLEMAN, JJ
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 102 - 104
[5] ZN DIFFUSION AND DISORDERING OF AN ALAS-GAAS SUPER-LATTICE ALONG ITS LAYERS
KIRCHOEFER, SW
HOLONYAK, N
COLEMAN, JJ
DAPKUS, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 766 - 768
[6] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[7] INDUCED DISORDER OF ALAS-ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURES
LAIDIG, WD
HOLONYAK, N
COLEMAN, JJ
DAPKUS, PD
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 1 - 20
[8] THE EFFECT OF TRIMETHYLALUMINUM CONCENTRATION ON THE INCORPORATION OF P IN ALXGA1-XPYAS1-Y GROWN BY ORGANO-METALLIC VAPOR-PHASE EPITAXY
LUDOWISE, MJ
DIETZE, WT
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 59 - 73
[9] A GAASXP1-X-GAP STRAINED-LAYER SUPER-LATTICE
OSBOURN, GC
BIEFELD, RM
GOURLEY, PL
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 172 - 174
[10] INTERMIXING OF AN ALAS-GAAS SUPER-LATTICE BY ZN DIFFUSION
VANVECHTEN, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7082 - 7084

← 1 →