DOMAIN-STRUCTURE OF THE SI(111)2X1 SURFACE STUDIED BY REFLECTION ELECTRON-MICROSCOPY

被引：5

作者：

BENNETT, PA ^{[1
]}

OU, H ^{[1
]}

ELIBOL, C ^{[1
]}

COWLEY, JM ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573151

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1634 / 1635

页数：2

共 8 条

[1] SYSTEM FOR REFLECTION ELECTRON-MICROSCOPY AND ELECTRON-DIFFRACTION AT INTERMEDIATE ENERGIES [J].

COWLEY, JM ;

ALBAIN, JL ;

HEMBREE, GG ;

HOJLUNDNIELSEN, PE ;

KOCH, FA ;

LANDRY, JD ;

SHUMAN, H .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (07) :826-829

[2] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES [J].

HENZLER, M .

SURFACE SCIENCE, 1973, 36 (01) :109-122

[3] LEED-INVESTIGATION OF STEP ARRAYS ON CLEAVED GERMANIUM (111) SURFACES [J].

HENZLER, M .

SURFACE SCIENCE, 1970, 19 (01) :159-&

[4]

HENZLER M, 1974, JPN J APPL PHYS 2 S, V2

[5]

KRIVANEK O, 1983, ULTRAMICROSCOPY, V11, P91

[6] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

[7] PHOTOEMISSION MEASUREMENTS OF STEP-DEPENDENT SURFACE STATES ON CLEAVED SILICON [J].

ROWE, JE ;

CHRISTMAN, SB ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1975, 34 (14) :874-877

[8] SI(111)-(2X1) SURFACE - BUCKLING, CHAINS, OR MOLECULES [J].

TROMP, RM ;

SMIT, L ;

VANDERVEEN, JF .

PHYSICAL REVIEW LETTERS, 1983, 51 (18) :1672-1675

← 1 →