EXPLANATION AND MODEL FOR THE LOGARITHMIC TIME-DEPENDENCE OF P-MOSFET DEGRADATION

被引：67
|
作者：
WANG, Q
BROX, M
KRAUTSCHNEIDER, WH
WEBER, W
机构：
[1] Corporate Research and Development, Siemens AG
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 05期
关键词：
D O I：
10.1109/55.79562
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The degradation of p-MOS transistors is shown to proceed logarithmically in time. A simple, analytic degradation model is proposed that fully accounts for this observation. The logarithmic time dependence originates from the logarithmic growth of a region of filled traps from the drain junction towards the source. On this basis, a reliable lifetime extrapolation is performed.
引用
收藏
页码：218 / 220
页数：3
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