STUDIES OF GAAS OXIDE INTERFACES WITH AND WITHOUT SI INTERLAYER

被引：24
作者：
FREEOUF, JL
BUCHANAN, DA
WRIGHT, SL
JACKSON, TN
BATEY, J
ROBINSON, B
CALLEGARI, A
PACCAGNELLA, A
WOODALL, JM
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1116/1.584979
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：860 / 866
页数：7
相关论文
共 20 条
[1]   LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
BATEY, J ;
TIERNEY, E .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3136-3145
[2]   FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J].
BAYRAKTAROGLU, B ;
KOHN, E ;
HARTNAGEL, HL .
ELECTRONICS LETTERS, 1976, 12 (02) :53-54
[3]   SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].
BROWN, DM ;
GRAY, PV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+
[4]   GAAS MIS STRUCTURES WITH SIO2 USING A THIN SILICON INTERLAYER [J].
FOUNTAIN, GG ;
HATTANGADY, SV ;
VITKAVAGE, DJ ;
RUDDER, RA ;
MARKUNAS, RJ .
ELECTRONICS LETTERS, 1988, 24 (18) :1134-1135
[5]  
FOUNTAIN GG, UNPUB 1989 P INT EL, P89
[6]   THE ANALYSIS OF COMPLEX SAMPLES BY SPECTROSCOPIC ELLIPSOMETRY [J].
FREEOUF, JL .
APPLIED SURFACE SCIENCE, 1989, 41-2 :323-328
[7]   METAL (100)GAAS INTERFACE - CASE FOR A METAL-INSULATOR-SEMICONDUCTOR-LIKE STRUCTURE [J].
FREEOUF, JL ;
WOODALL, JM ;
BRILLSON, LJ ;
VITURRO, RE .
APPLIED PHYSICS LETTERS, 1990, 56 (01) :69-71
[8]   APPLICATION OF SPECTROSCOPIC ELLIPSOMETRY TO COMPLEX SAMPLES [J].
FREEOUF, JL .
APPLIED PHYSICS LETTERS, 1988, 53 (24) :2426-2428
[9]   SPECTROSCOPIC AND ELECTRICAL STUDIES OF GAAS METAL-OXIDE SEMICONDUCTOR STRUCTURES [J].
FREEOUF, JL ;
SILBERMAN, JA ;
WRIGHT, SL ;
TIWARI, S ;
BATEY, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :854-860
[10]   CONTROL OF COMPOUND SEMICONDUCTOR INSULATOR INTERFACES BY AN ULTRATHIN MOLECULAR-BEAM EPITAXY SI LAYER [J].
HASEGAWA, H ;
AKAZAWA, M ;
ISHII, H ;
MATSUZAKI, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :870-878
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