PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引:76
作者
AKIMOTO, K
KAMADA, M
TAIRA, K
ARAI, M
WATANABE, N
机构
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D O I
10.1063/1.336938
中图分类号
O59 [应用物理学];
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页码:2833 / 2836
页数:4
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共 23 条
[1]  
AKIMOTO K, 1983, APPL PHYS LETT, V43, P1062, DOI 10.1063/1.94236
[2]   INFRARED-ABSORPTION AND LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
AKIMOTO, K ;
DOHSEN, M ;
ARAI, M ;
WATANABE, N .
APPLIED PHYSICS LETTERS, 1984, 45 (09) :922-924
[3]   NEUTRON-INDUCED TRAPPING LEVELS IN ALUMINUM GALLIUM-ARSENIDE [J].
BARNES, CE ;
ZIPPERIAN, TE ;
DAWSON, LR .
JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) :95-118
[4]   THE GASEOUS SPECIES OF THE AL-AL2O3 SYSTEM [J].
BREWER, L ;
SEARCY, AW .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (11) :5308-5314
[5]   COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].
CHAND, N ;
HENDERSON, T ;
KLEM, J ;
MASSELINK, WT ;
FISCHER, R ;
CHANG, YC ;
MORKOC, H .
PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492
[6]   THE EFFECT OF THE OXYGEN CONCENTRATION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS FILMS GROWN BY MBE [J].
FOXON, CT ;
CLEGG, JB ;
WOODBRIDGE, K ;
HILTON, D ;
DAWSON, P ;
BLOOD, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :703-703
[7]   EFFECT OF HEAT-TREATMENT ON NATURE OF TRAPS IN EPITAXIAL GAAS [J].
HASEGAWA, F ;
MAJERFELD, A .
ELECTRONICS LETTERS, 1976, 12 (02) :52-53
[8]  
HERZBERG G, 1959, MOL SPECTRA MOL STRU
[9]   FORMATION, STABILITY AND CRYSTAL STRUCTURE OF THE SOLID ALUMINUM SUBOXIDES - AL2O AND ALO [J].
HOCH, M ;
JOHNSTON, HL .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1954, 76 (09) :2560-2561
[10]   PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .1. LUMINESCENCE OF THE CONSTITUENT ALXGA1-XAS BARRIER AND GAAS WELL MATERIAL [J].
JUNG, H ;
FISCHER, A ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (01) :9-17