MAGNETO-OSCILLATORY EXCITATION SPECTRA OF SHALLOW ACCEPTOR IMPURITIES IN INSB AND GE

被引：26

作者：

KAPLAN, R

机构：

来源：

PHYSICAL REVIEW LETTERS | 1968年 / 20卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.20.329

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：329 / &

共 9 条

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[8] EFFECTIVE-MASS THEORETICAL APPROACH TO OPTICAL + MICROWAVE PHENOMENA IN SEMICONDUCTORS I . ZEEMAN EFFECT OF ACCEPTORS IN SI + GE [J].

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