HYDROGENATED AMORPHOUS-SILICON PREPARED BY ARF AND F2 EXCIMER LASER-INDUCED PHOTOCHEMICAL VAPOR-DEPOSITION

被引：25

作者：

TOYOSHIMA, Y

KUMATA, K

ITOH, U

MATSUDA, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 23期

关键词：

D O I：

10.1063/1.98302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1925 / 1927

页数：3

共 9 条

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[4]

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[7] QUANTITATIVE PHOTOEXCITATION STUDY OF SIH4 IN VACUUM ULTRAVIOLET [J].

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[8] AR(3P2) INDUCED CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON [J].

TOYOSHIMA, Y ;

KUMATA, K ;

ITOH, U ;

ARAI, K ;

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[9]

TOYOSHIMA Y, 1985, 12TH INT C PHOT TOK

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