共 50 条
- [1] ACCUMULATION OF RADIATIVE RECOMBINATION CENTERS IN SILICON DUE TO HIGH-TEMPERATURE ELECTRON-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (01): : 67 - 70
- [2] ELECTRON-IRRADIATION AND ANNEALING OF GOLD BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 479 - 479
- [3] ELECTRON-IRRADIATION AND ANNEALING OF GOLD-DOPED P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 249 - 250
- [5] DEFECTS PRODUCED IN GERMANIUM BY QUENCHING AND ELECTRON-IRRADIATION JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L124 - L125
- [7] CHANGES IN AC HOPPING CONDUCTIVITY ON ELECTRON-IRRADIATION OF GERMANIUM BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 479 - 479
- [8] INFLUENCE OF ELECTRON-IRRADIATION ON GERMANIUM-SILICON ALLOYS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1255 - 1257
- [10] EFFECT OF ELECTRON-IRRADIATION ON GOLD MIGRATION IN SILICON ZHURNAL TEKHNICHESKOI FIZIKI, 1979, 49 (11): : 2446 - 2447