INTERFACE CHEMISTRY AND ELECTRICAL-PROPERTIES OF TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO GAAS

被引：43
作者：
WALDROP, JR
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 04期
关键词：
D O I：
10.1063/1.93509
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：350 / 352
页数：3
相关论文
共 15 条
[11]   UNIFIED DEFECT MODEL AND BEYOND [J].
SPICER, WE ;
LINDAU, I ;
SKEATH, P ;
SU, CY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027
[12]   INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS [J].
WALDROP, JR ;
GRANT, RW .
APPLIED PHYSICS LETTERS, 1979, 34 (10) :630-632
[13]   REFRACTORY-METAL CONTACTS TO GAAS - INTERFACE CHEMISTRY AND SCHOTTKY-BARRIER FORMATION [J].
WALDROP, JR ;
KOWALCZYK, SP ;
GRANT, RW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :607-610
[14]   SPUTTERED TIW-AU SCHOTTKY BARRIERS ON GAAS [J].
WEINMAN, LS ;
JAMISON, SA ;
HELIX, MJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :838-840
[15]   SURFACE DEFECT EFFECTS ON SCHOTTKY BARRIERS [J].
WILLIAMS, RH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :929-936
12