INTERFACE CHEMISTRY AND ELECTRICAL-PROPERTIES OF TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO GAAS

被引：43

作者：

WALDROP, JR

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 04期

关键词：

D O I：

10.1063/1.93509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：350 / 352

页数：3

共 15 条

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[2]

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[7] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J].

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[9]

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