REACTIVE ION ETCHING OF GAINP, GAAS, AND ALGAAS

被引：13

作者：

WU, JW ^{[1
]}

CHANG, CY ^{[1
]}

CHANG, EY ^{[1
]}

CHANG, SH ^{[1
]}

LIN, KC ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST MAT SCI & ENGN,HSINCHU 30039,TAIWAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 04期

关键词：

D O I：

10.1149/1.2044174

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have investigated the reactive ion etching of GaInP, GaAs, and AlGaAs. High etching selectivity of GaAs to AlGaAs (or to GaInP) can be achieved due to the formation of aluminum fluoride (AlF3) and indium fluoride (InF3) using a BCl3/SF6 mixture. By using a CH4/H-2 mixture, a polymer film is accumulated on the GaAs surface after reactive ion etching. This polymer film inhibits the reactive ion etching of GaAs. There is no polymer film accumulated on the surface of GaInP. The polymer deposited on the surface of GaInP is removed as the etching products are being removed. Hence, a high etching selectivity of GaInP to GaAs can be achieved by using a CH4/H-2 mixture.

引用

页码：1340 / 1343

页数：4

共 15 条

[1]

Chang M. F., 1990, International Journal of High Speed Electronics, V1, P245, DOI 10.1142/S0129156490000137

[2]

COOPERMAN SS, 1989, J VAC SCI TECHNOL B, V10, P41

[3] SELECTIVE WET ETCHING OF GALNP, GAAS, AND INP IN SOLUTIONS OF HCL, CH3COOH, AND H2O2 [J].

FLEMISH, JR ;

JONES, KA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) :844-847

[4] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J].

HIKOSAKA, K ;

MIMURA, T ;

JOSHIN, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L847-L850

[5] SELECTIVE ETCHING OF GAAS AND AL0.30GA0.70AS WITH CITRIC-ACID HYDROGEN-PEROXIDE SOLUTIONS [J].

JUANG, C ;

KUHN, KJ ;

DARLING, RB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (05) :1122-1124

[6]

KENEFICK K, 1982, J ELECTROCHEM SOC, V129, P2380, DOI 10.1149/1.2123532

[7] SELECTIVE GAAS/ALXGA1-X AS REACTIVE ION ETCHING USING CCL2F2 [J].

KNOEDLER, CM ;

KUECH, TF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05) :1233-1236

[8] HIGH-QUALITY IN0.48GA0.52P GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

KUO, JM ;

FITZGERALD, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :959-961

[9] AN IMPROVED TECHNIQUE FOR SELECTIVE ETCHING OF GAAS AND GA1-XALXAS [J].

LEPORE, JJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6441-6442

[10]

MOCELLA MT, 1991, SOLID STATE TECH, V4, P63

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