RAMAN-SCATTERING OF AMORPHOUS SI, GE, AND THEIR ALLOYS

被引：0
|
作者：
LANNIN, JS
机构：
来源：
SEMICONDUCTORS AND SEMIMETALS | 1984年 / 21卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：159 / 195
页数：37
相关论文
共 50 条
  • [21] RAMAN-SCATTERING IN ULTRATHIN AMORPHOUS SI-SIO2 SUPERLATTICES
    DENISOV, VN
    MAVRIN, BN
    PUDONIN, FA
    VINOGRADOV, EA
    FIZIKA TVERDOGO TELA, 1990, 32 (07): : 2174 - 2177
  • [22] RAMAN-SCATTERING FROM SI-SI0.5GE0.5(111) SUPERLATTICES
    TALOCHKIN, AB
    MARKOV, VA
    PUSEP, YA
    PCHELYAKOV, OP
    SINYUKOV, MP
    SUPERLATTICES AND MICROSTRUCTURES, 1991, 10 (02) : 179 - 182
  • [23] INVESTIGATION OF GLOW-DISCHARGE AMORPHOUS SI BY ELECTROREFLECTANCE AND RAMAN-SCATTERING
    TSU, R
    IZU, M
    OVSHINSKY, SR
    POLLAK, FH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 295 - 296
  • [24] RAMAN-SCATTERING PROPERTIES OF AMORPHOUS AS AND SB
    LANNIN, JS
    PHYSICAL REVIEW B, 1977, 15 (08): : 3863 - 3871
  • [25] OBSERVATION OF RAMAN-SCATTERING IN AN AMORPHOUS METAL
    LUSTIG, N
    FAINCHTEIN, R
    LANNIN, JS
    PHYSICAL REVIEW LETTERS, 1985, 55 (17) : 1775 - 1777
  • [26] RAMAN-SCATTERING AND THE STRUCTURE OF AMORPHOUS SE
    LANNIN, JS
    CARROLL, PJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 167 - 167
  • [27] RAMAN-SCATTERING OF AMORPHOUS SELENIUM FILMS
    CARROLL, PJ
    LANNIN, JS
    SOLID STATE COMMUNICATIONS, 1981, 40 (01) : 81 - 84
  • [28] CHARACTERIZATION OF GE-SI INTERFACES AND ULTRA-THIN GE LAYERS BY RAMAN-SCATTERING
    TSANG, JC
    SPECTROSCOPY OF SEMICONDUCTOR MICROSTRUCTURES, 1989, 206 : 175 - 194
  • [29] TEMPERATURE-DEPENDENCE OF RAMAN-SCATTERING IN GE1-XSIX ALLOYS
    BURKE, HH
    HERMAN, IP
    PHYSICAL REVIEW B, 1993, 48 (20): : 15016 - 15024
  • [30] VIBRATIONAL AND RAMAN-SCATTERING PROPERTIES OF CRYSTALLINE GE1-XSIX ALLOYS
    LANNIN, JS
    PHYSICAL REVIEW B, 1977, 16 (04): : 1510 - 1518
12345