RAMAN-SCATTERING OF AMORPHOUS SI, GE, AND THEIR ALLOYS

被引：0
|
作者：
LANNIN, JS
机构：
来源：
SEMICONDUCTORS AND SEMIMETALS | 1984年 / 21卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：159 / 195
页数：37
相关论文
共 50 条
  • [1] RAMAN-SCATTERING IN GE-SI ALLOYS
    BRYA, WJ
    SOLID STATE COMMUNICATIONS, 1973, 12 (04) : 253 - 257
  • [2] RAMAN-SCATTERING STUDY OF AMORPHOUS SI-GE INTERFACES
    PERSANS, PD
    RUPPERT, AF
    ABELES, B
    TIEDJE, T
    PHYSICAL REVIEW B, 1985, 32 (08): : 5558 - 5560
  • [3] STRUCTURAL STUDIES OF CRYSTALLINE AND AMORPHOUS SI-GE ALLOYS USING EXAFS AND RAMAN-SCATTERING
    MINOMURA, S
    TSUJI, K
    WAKAGI, M
    ISHIDATE, T
    INOUE, K
    SHIBUYA, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 541 - 544
  • [4] MODEL STRUCTURE CALCULATION OF RAMAN-SCATTERING IN AMORPHOUS-GE AND SI
    VONHEIME.L
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 390 - 391
  • [5] STRUCTURE AND RAMAN-SCATTERING OF AMORPHOUS GE0.5SI0.5
    SHEVCHIK, NJ
    LANNIN, JS
    TEJEDA, J
    PHYSICAL REVIEW B, 1973, 7 (08): : 3987 - 3991
  • [6] DETERMINATION OF THE ENERGY BARRIER FOR STRUCTURAL RELAXATION IN AMORPHOUS SI AND GE BY RAMAN-SCATTERING
    TSU, R
    GONZALEZHERNANDEZ, J
    POLLAK, FH
    SOLID STATE COMMUNICATIONS, 1985, 54 (05) : 447 - 450
  • [7] RAMAN-SCATTERING OF LASER ANNEALED AMORPHOUS SI
    BAGLIN, JE
    TAN, TY
    TSU, R
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 296 - 296
  • [8] RAMAN-SCATTERING IN AMORPHOUS GE-SE MIXTURES
    SHIRAFUJI, J
    OHSHIMA, Y
    INUISHI, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (03) : 915 - 915
  • [9] DISORDER INDUCED ONE-PHONON RAMAN-SCATTERING - GE-SI ALLOYS
    LANNIN, JS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 340 - 340
  • [10] RAMAN-SCATTERING OF OPTICAL PHONONS IN GE/SI HETEROSTRUCTURES
    GAISLER, VA
    MARKOV, VA
    SINYUKOV, MP
    TALOCHKIN, AB
    FIZIKA TVERDOGO TELA, 1989, 31 (08): : 284 - 287
12345