SCHOTTKY-BARRIER RESTRICTED ALGAAS LASER WITH AN ETCHED MESA OHMIC CONTACT

被引：2

作者：

REYNOLDS, CL ^{[1
]}

HOLBROOK, WR ^{[1
]}

NYGREN, SF ^{[1
]}

SHIMER, JA ^{[1
]}

LOGAN, RA ^{[1
]}

TEMKIN, H ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 07期

关键词：

D O I：

10.1063/1.334228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1969 / 1971

页数：3

共 10 条

[1] NEW STRIPE-GEOMETRY LASER WITH SIMPLIFIED FABRICATION PROCESS [J].

AMANN, MC .

ELECTRONICS LETTERS, 1979, 15 (14) :441-442

[2]

CASEY HC, 1978, HETEROSTRUCTURE LA B, P207

[3] NEW RESTRICTED CONTACT LEDS USING A SCHOTTKY-BARRIER [J].

CHIN, AK ;

ZIPFEL, CL ;

DUTT, BV ;

DIGIUSEPPE, MA ;

BAUERS, KB ;

ROCCASECCA, DD .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :1487-1491

[4] THE RELIABILITY OF SCHOTTKY-BARRIER RESTRICTED GAAS/GAALAS LEDS [J].

CHIN, AK ;

ZIPFEL, CL ;

DUTT, BV .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (09) :1308-1312

[5] CURRENT DIRECTIONS IN GAAS-LASER DEVICE DEVELOPMENT [J].

DIXON, RW .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (05) :669-722

[6] ACCELERATED FACET EROSION FORMATION AND DEGRADATION OF (AL, GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J].

NASH, FR ;

HARTMAN, RL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (10) :1022-1033

[7] LIQUID-PHASE EPITAXIAL-GROWTH OF (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASER MATERIAL IN A SAPPHIRE BOAT [J].

REYNOLDS, CL ;

TAMARGO, MC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :9217-9219

[8]

SHIMER JA, UNPUB

[9] SCHOTTKY-BARRIER RESTRICTED GAALAS LASER [J].

TEMKIN, H ;

CHIN, AK ;

DUTT, BV .

ELECTRONICS LETTERS, 1982, 18 (16) :701-703

[10] STRIPE-GEOMETRY LASER WITH INSITU OHMIC CONTACT AND SELF-ALIGNED NATIVE SURFACE OXIDE MASK FOR CURRENT ISOLATION PREPARED BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

LOGAN, RA ;

DITZENBERGER, JA .

ELECTRONICS LETTERS, 1982, 18 (03) :123-124

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