A PHYSICAL MODEL FOR RANDOM TELEGRAPH SIGNAL CURRENTS IN SEMICONDUCTOR-DEVICES

被引：90
作者：
KANDIAH, K
DEIGHTON, MO
WHITING, FB
机构：
[1] AERE,HARWELL OX11 0RA,OXON,ENGLAND
[2] LINK ANALYT LTD,HIGH WYCOMBE HP12 3SE,BUCKS,ENGLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期
关键词：
D O I：
10.1063/1.343523
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：937 / 948
页数：12
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