ELECTRON-IRRADIATION DAMAGE IN RADIATION-RESISTANT INP SOLAR-CELLS

被引:49
作者
YAMAGUCHI, M
UEMURA, C
YAMAMOTO, A
SHIBUKAWA, A
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 03期
关键词
D O I
10.1143/JJAP.23.302
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:302 / 307
页数:6
相关论文
共 10 条
[1]   THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J].
BERZ, F ;
KUIKEN, HK .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :437-445
[2]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[3]   REVIEW OF RADIATION-DAMAGE TO SILICON SOLAR CELLS [J].
CURTIN, DJ ;
STATLER, RL .
IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS, 1975, 11 (04) :499-513
[4]  
Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11
[5]  
Lang D. V., 1977, I PHYS C SER, V31, P70
[6]   DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN INDIUM-PHOSPHIDE BY SURFACE PHOTOVOLTAGE MEASUREMENT [J].
LI, SS .
APPLIED PHYSICS LETTERS, 1976, 29 (02) :126-127
[7]   RADIATION DAMAGE IN GE AND SI DETECTED BY CARRIER LIFETIME CHANGES - DAMAGE THRESHOLDS [J].
LOFERSKI, JJ ;
RAPPAPORT, P .
PHYSICAL REVIEW, 1958, 111 (02) :432-439
[8]   CO-60 GAMMA-RAY AND ELECTRON-IRRADIATION DAMAGE OF GAAS SINGLE-CRYSTALS AND SOLAR-CELLS [J].
YAMAGUCHI, M ;
AMANO, C .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5021-5029
[9]   EFFECTS OF IMPURITIES ON GAMMA-IRRADIATED SILICON CRYSTAL EXAMINED BY PHOTOVOLTAIC EFFECT OF P-N-JUNCTION DIODE [J].
YAMAGUCHI, M ;
NAGAI, O .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (07) :1016-+
[10]  
YAMAMOTO A, 1984, APPL PHYS LETT, V44