SPATIAL DEPENDENCE OF CARRIER LIFETIME IN THIN-FILMS OF SILICON ON SAPPHIRE

被引：24

作者：

KRANZER, D ^{[1
]}

机构：

[1] GEORGE C MARSHALL SPACE FLIGHT CTR,HUNTSVILLE,AL 35812

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 02期

关键词：

D O I：

10.1063/1.1655396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：103 / 105

页数：3

共 12 条

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SILVER, RS .

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APPLIED PHYSICS LETTERS, 1972, 20 (01) :1-&

[6]

MATARE HF, 1971, DEFECT ELECTRONICS S

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ROBINSON, PH ;

HEIMAN, FP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :141-+

[8] HYDROGEN CHLORIDE AND CHLORINE GETTERING - EFFECTIVE TECHNIQUE FOR IMPROVING PERFORMANCE OF SILICON DEVICES [J].

RONEN, RS ;

ROBINSON, PH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :747-+

[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

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SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[10] SILICON-ON-SAPPHIRE WITH MICROSECOND CARRIER LIFETIMES [J].

SCHRODER, DK ;

RAICHOUD.P .

APPLIED PHYSICS LETTERS, 1973, 22 (09) :455-457

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