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SI BINDING AND NUCLEATION ON SI(100)
被引:90
作者
:
BEDROSSIAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
L-350, Lawrence Livermore National Laboratory, Livermore
BEDROSSIAN, PJ
机构
:
[1]
L-350, Lawrence Livermore National Laboratory, Livermore
来源
:
PHYSICAL REVIEW LETTERS
|
1995年
/ 74卷
/ 18期
关键词
:
D O I
:
10.1103/PhysRevLett.74.3648
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
Si adatoms deposited on Si(100)- (2×1) below 200 C assume metastable binding configurations, each distinct from the dimer string topology ordinarily observed following deposition at higher temperatures. Isolated ad-dimers which nucleate predominantly on substrate dimer rows at room temperature do not constitute the precursors for dimer strings. Instead, they transform upon annealing at 120 C to metastable, dimerized lines assembled end to end, parallel to the substrate's dimer bonds. © 1995 The American Physical Society.
引用
收藏
页码:3648 / 3651
页数:4
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SYMMETRY AND STABILITY OF SOLITARY DIMER ROWS ON SI(100)
[J].
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PHYSICAL REVIEW LETTERS,
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LOW-TEMPERATURE SI MOLECULAR-BEAM EPITAXY - SOLUTION TO THE DOPING PROBLEM
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[J].
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→
共 35 条
[1]
SYMMETRY AND STABILITY OF SOLITARY DIMER ROWS ON SI(100)
[J].
BEDROSSIAN, P
论文数:
0
引用数:
0
h-index:
0
机构:
HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138
BEDROSSIAN, P
;
KAXIRAS, E
论文数:
0
引用数:
0
h-index:
0
机构:
HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138
KAXIRAS, E
.
PHYSICAL REVIEW LETTERS,
1993,
70
(17)
:2589
-2592
[2]
BINDING AND DIFFUSION OF A SI ADATOM ON THE SI(100) SURFACE
[J].
BROCKS, G
论文数:
0
引用数:
0
h-index:
0
机构:
SCUOLA INT SUPER STUDI AVANZATI,TRIESTE,ITALY
SCUOLA INT SUPER STUDI AVANZATI,TRIESTE,ITALY
BROCKS, G
;
KELLY, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
SCUOLA INT SUPER STUDI AVANZATI,TRIESTE,ITALY
SCUOLA INT SUPER STUDI AVANZATI,TRIESTE,ITALY
KELLY, PJ
;
CAR, R
论文数:
0
引用数:
0
h-index:
0
机构:
SCUOLA INT SUPER STUDI AVANZATI,TRIESTE,ITALY
SCUOLA INT SUPER STUDI AVANZATI,TRIESTE,ITALY
CAR, R
.
PHYSICAL REVIEW LETTERS,
1991,
66
(13)
:1729
-1732
[3]
THE ENERGETICS OF ADATOMS ON THE SI(100) SURFACE
[J].
BROCKS, G
论文数:
0
引用数:
0
h-index:
0
机构:
IRRMA, CH-1015 LAUSANNE, SWITZERLAND
BROCKS, G
;
KELLY, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IRRMA, CH-1015 LAUSANNE, SWITZERLAND
KELLY, PJ
;
CAR, R
论文数:
0
引用数:
0
h-index:
0
机构:
IRRMA, CH-1015 LAUSANNE, SWITZERLAND
CAR, R
.
SURFACE SCIENCE,
1992,
269
:860
-866
[4]
THEORY OF HOMOEPITAXY ON SI(001) .1. KINETICS DURING GROWTH
[J].
CLARKE, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
CLARKE, S
;
WILBY, MR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
WILBY, MR
;
VVEDENSKY, DD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
VVEDENSKY, DD
.
SURFACE SCIENCE,
1991,
255
(1-2)
:91
-110
[5]
LIMITING THICKNESS HEPI FOR EPITAXIAL-GROWTH AND ROOM-TEMPERATURE SI GROWTH ON SI(100)
[J].
EAGLESHAM, DJ
论文数:
0
引用数:
0
h-index:
0
EAGLESHAM, DJ
;
GOSSMANN, HJ
论文数:
0
引用数:
0
h-index:
0
GOSSMANN, HJ
;
CERULLO, M
论文数:
0
引用数:
0
h-index:
0
CERULLO, M
.
PHYSICAL REVIEW LETTERS,
1990,
65
(10)
:1227
-1230
[6]
LOW-TEMPERATURE SI MOLECULAR-BEAM EPITAXY - SOLUTION TO THE DOPING PROBLEM
[J].
GOSSMANN, HJ
论文数:
0
引用数:
0
h-index:
0
GOSSMANN, HJ
;
SCHUBERT, EF
论文数:
0
引用数:
0
h-index:
0
SCHUBERT, EF
;
EAGLESHAM, DJ
论文数:
0
引用数:
0
h-index:
0
EAGLESHAM, DJ
;
CERULLO, M
论文数:
0
引用数:
0
h-index:
0
CERULLO, M
.
APPLIED PHYSICS LETTERS,
1990,
57
(23)
:2440
-2442
[7]
NUCLEATION AND GROWTH OF EPITAXIAL SILICON ON SI(001) AND SI(111) SURFACES BY SCANNING TUNNELING MICROSCOPY
[J].
HAMERS, RJ
论文数:
0
引用数:
0
h-index:
0
HAMERS, RJ
;
KOHLER, UK
论文数:
0
引用数:
0
h-index:
0
KOHLER, UK
;
DEMUTH, JE
论文数:
0
引用数:
0
h-index:
0
DEMUTH, JE
.
ULTRAMICROSCOPY,
1989,
31
(01)
:10
-19
[8]
SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN SI(001) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
[J].
HOEVEN, AJ
论文数:
0
引用数:
0
h-index:
0
HOEVEN, AJ
;
LENSSINCK, JM
论文数:
0
引用数:
0
h-index:
0
LENSSINCK, JM
;
DIJKKAMP, D
论文数:
0
引用数:
0
h-index:
0
DIJKKAMP, D
;
VANLOENEN, EJ
论文数:
0
引用数:
0
h-index:
0
VANLOENEN, EJ
;
DIELEMAN, J
论文数:
0
引用数:
0
h-index:
0
DIELEMAN, J
.
PHYSICAL REVIEW LETTERS,
1989,
63
(17)
:1830
-1832
[9]
LU YT, 1991, SURF SCI, V257, P199
[10]
REVERSIBLE ROTATION OF ANTIMONY DIMERS ON THE SILICON (001) SURFACE WITH A SCANNING TUNNELING MICROSCOPE
[J].
MO, YW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights
MO, YW
.
SCIENCE,
1993,
261
(5123)
:886
-888
←
1
2
3
4
→