THE DEPENDENCE OF 77-K ELECTRON VELOCITY-FIELD CHARACTERISTICS ON LOW-FIELD MOBILITY IN ALGAAS-GAAS MODULATION-DOPED STRUCTURES

被引：24
作者：
MASSELINK, WT
HENDERSON, TS
KLEM, J
KOPP, WF
MORKOC, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 05期
关键词：
D O I：
10.1109/T-ED.1986.22545
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：639 / 645
页数：7
相关论文
共 21 条
[1]   DETERMINATION OF CARRIER SATURATION VELOCITY IN SHORT-GATE-LENGTH MODULATION-DOPED FETS [J].
DAS, MB ;
KOPP, W ;
MORKOC, H .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :446-449
[2]   TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS) [J].
DRUMMOND, TJ ;
KOPP, W ;
MORKOC, H ;
KEEVER, M .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :277-279
[3]   FIELD-DEPENDENCE OF MOBILITY IN AL0.2GA0.8AS-GAAS HETEROJUNCTIONS AT VERY LOW FIELDS [J].
DRUMMOND, TJ ;
KEEVER, M ;
KOPP, W ;
MORKOC, H ;
HESS, K ;
STREETMAN, BG ;
CHO, AY .
ELECTRONICS LETTERS, 1981, 17 (15) :545-547
[4]   HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].
FANG, FF ;
FOWLER, AB .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+
[5]   TRANSPORT-PROPERTIES OF SELECTIVELY DOPED GAAS-(ALGA)AS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
HWANG, JCM ;
KASTALSKY, A ;
STORMER, HL ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :802-804
[6]   FIELD-DEPENDENT TRANSPORT OF ELECTRONS IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION SYSTEMS [J].
INOUE, K ;
SAKAKI, H ;
YOSHINO, J .
APPLIED PHYSICS LETTERS, 1985, 47 (06) :614-616
[7]   PARALLEL ELECTRON-TRANSPORT AND FIELD EFFECTS OF ELECTRON DISTRIBUTIONS IN SELECTIVELY-DOPED GAAS/N-ALGAAS [J].
INOUE, M ;
INAYAMA, M ;
HIYAMIZU, S ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L213-L215
[8]   CHARACTERIZATION OF EXTREMELY LOW CONTACT RESISTANCES ON MODULATION-DOPED FETS [J].
KETTERSON, AA ;
PONSE, F ;
HENDERSON, T ;
KLEM, J ;
PENG, CK ;
MORKOC, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2257-2261
[9]  
LIPPMANN HJ, 1958, Z NATURFORSCH PT A, V13, P462
[10]   MAGNETORESISTANCE METHOD TO DETERMINE GAAS AND ALXGA1-XAS MOBILITIES IN ALXGA1-XAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES [J].
LOOK, DC ;
NORRIS, GB ;
KOPP, W ;
HENDERSON, T ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :267-269
123