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PHYSICAL REVIEW B,
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THEORY OF DEFECT FORMATION IN THE GLOW-DISCHARGE DEPOSITION OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
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PHYSICAL REVIEW B,
1985, 31 (06)
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STRUCTURE OF AMORPHOUS (GE,SI)1-XYX ALLOYS
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PHYSICAL REVIEW LETTERS,
1979, 42 (17)
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LOCAL BONDING CONFIGURATION OF PHOSPHORUS IN DOPED AND COMPENSATED AMORPHOUS HYDROGENATED SILICON
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PHYSICAL REVIEW B,
1983, 27 (08)
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SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON
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SOLID STATE COMMUNICATIONS,
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ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
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DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON
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1982, 49 (16)
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