EXCITONIC ABSORPTION-SPECTRA OF GAAS-ALAS SUPERLATTICE AT HIGH-TEMPERATURE

被引：52

作者：

IWAMURA, H

KOBAYASHI, H

OKAMOTO, H

机构：

[1] NTT, Musashino Electrical, Communication Lab, Musashino, Jpn, NTT, Musashino Electrical Communication Lab, Musashino, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 10期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS - SPECTROSCOPY; ABSORPTION;

D O I：

10.1143/JJAP.23.L795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical absorption spectra of MBE grown GaAs-AlAs superlattices with various thickness of the potential-well layer were measured in the temperature range up to 500 K. The excitonic absorption peak is observed even at a temperature of 500 K or higher. The broadening parameter GAMMA for the exciton peak was determined by a curve fitting. This parameter determines the temperature limit below which double absorption peaks due to heavy and light hole exciton are observed.

引用

页码：L795 / L798

页数：4

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