EPITAXIAL SILICON GROWTH IN A REDUCED PRESSURE AND TEMPERATURE CVD REACTOR

[1] BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[2] MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH4/H-2 AT REDUCED PRESSURES [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 259 - 274

[3] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765

[4] DROWLEY CI, 1987, ELECTROCHEM SOC, V87, P253

[5] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[6] Gibbons J. F., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P566, DOI 10.1109/IEDM.1988.32878

[7] LIMITED REACTION PROCESSING - SILICON EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 721 - 723

[8] HIRSCHFELDER JO, 1954, MOLECULAR THEORY GAS, pCH8

[9] OBSERVATION OF HSICL IN A CHEMICAL VAPOR-DEPOSITION REACTOR BY LASER-EXCITED FLUORESCENCE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 125 - 126

[10] ISHITANI A, 1983, J CRYST GROWTH, V61, P91

[1] BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[2] MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH4/H-2 AT REDUCED PRESSURES [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 259 - 274

[3] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765

[4] DROWLEY CI, 1987, ELECTROCHEM SOC, V87, P253

[5] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[6] Gibbons J. F., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P566, DOI 10.1109/IEDM.1988.32878

[7] LIMITED REACTION PROCESSING - SILICON EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 721 - 723

[8] HIRSCHFELDER JO, 1954, MOLECULAR THEORY GAS, pCH8

[9] OBSERVATION OF HSICL IN A CHEMICAL VAPOR-DEPOSITION REACTOR BY LASER-EXCITED FLUORESCENCE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 125 - 126

[10] ISHITANI A, 1983, J CRYST GROWTH, V61, P91