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PLANAR SELECTIVE GROWTH OF INP BY MOVPE
被引:52
作者
:
NAKAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
NAKAI, K
SANADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
SANADA, T
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
YAMAKOSHI, S
机构
:
[1]
Fujitsu Lab Ltd, Japan
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1988年
/ 93卷
/ 1-4期
关键词
:
D O I
:
10.1016/0022-0248(88)90535-0
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
25
引用
收藏
页码:248 / 253
页数:6
相关论文
共 25 条
[1]
CHEMICAL ETCHING OF INGAASP/INP DH WAFER
[J].
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
ADACHI, S
;
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
NOGUCHI, Y
;
KAWAGUCHI, H
论文数:
0
引用数:
0
h-index:
0
KAWAGUCHI, H
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(05)
:1053
-1062
[2]
SELECTIVE MOCVD EPITAXY FOR OPTOELECTRONIC DEVICES
[J].
AZOULAY, R
论文数:
0
引用数:
0
h-index:
0
AZOULAY, R
;
BOUADMA, N
论文数:
0
引用数:
0
h-index:
0
BOUADMA, N
;
BOULEY, JC
论文数:
0
引用数:
0
h-index:
0
BOULEY, JC
;
DUGRAND, L
论文数:
0
引用数:
0
h-index:
0
DUGRAND, L
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:229
-234
[3]
MOCVD OF INP AND MASS-TRANSPORT ON STRUCTURED INP SUBSTRATES
[J].
BLAAUW, C
论文数:
0
引用数:
0
h-index:
0
BLAAUW, C
;
SZAPLONCZAY, A
论文数:
0
引用数:
0
h-index:
0
SZAPLONCZAY, A
;
FOX, K
论文数:
0
引用数:
0
h-index:
0
FOX, K
;
EMMERSTORFER, B
论文数:
0
引用数:
0
h-index:
0
EMMERSTORFER, B
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:326
-333
[4]
STUDY AND APPLICATION OF THE MASS-TRANSPORT PHENOMENON IN INP
[J].
CHEN, TR
论文数:
0
引用数:
0
h-index:
0
CHEN, TR
;
CHIU, LC
论文数:
0
引用数:
0
h-index:
0
CHIU, LC
;
HASSON, A
论文数:
0
引用数:
0
h-index:
0
HASSON, A
;
YU, KL
论文数:
0
引用数:
0
h-index:
0
YU, KL
;
KOREN, U
论文数:
0
引用数:
0
h-index:
0
KOREN, U
;
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
;
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(05)
:2407
-2412
[5]
MOVPE GROWTH OF SIO2-MASKED INP STRUCTURES AT REDUCED PRESSURES
[J].
CLAWSON, AR
论文数:
0
引用数:
0
h-index:
0
CLAWSON, AR
;
HANSON, CM
论文数:
0
引用数:
0
h-index:
0
HANSON, CM
;
VU, TT
论文数:
0
引用数:
0
h-index:
0
VU, TT
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:334
-339
[6]
GALE RP, 1983, I PHYS C SER, V65, P101
[7]
SELECTIVE GROWTH OF GAAS IN THE MOMBE AND MOCVD SYSTEMS
[J].
HEINECKE, H
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
HEINECKE, H
;
BRAUERS, A
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
BRAUERS, A
;
GRAFAHREND, F
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
GRAFAHREND, F
;
PLASS, C
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
PLASS, C
;
PUTZ, N
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
PUTZ, N
;
WERNER, K
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
WERNER, K
;
WEYERS, M
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
WEYERS, M
;
LUTH, H
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
LUTH, H
;
BALK, P
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
BALK, P
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:303
-309
[8]
A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE
[J].
HERSEE, SD
论文数:
0
引用数:
0
h-index:
0
HERSEE, SD
;
BARBIER, E
论文数:
0
引用数:
0
h-index:
0
BARBIER, E
;
BLONDEAU, R
论文数:
0
引用数:
0
h-index:
0
BLONDEAU, R
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:310
-320
[9]
VERY LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE INGAASP/INP LASER-DIODES PREPARED BY 3-STAGE METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
ISHIGURO, H
论文数:
0
引用数:
0
h-index:
0
ISHIGURO, H
;
KAWABATA, T
论文数:
0
引用数:
0
h-index:
0
KAWABATA, T
;
KOIKE, S
论文数:
0
引用数:
0
h-index:
0
KOIKE, S
.
APPLIED PHYSICS LETTERS,
1987,
51
(12)
:874
-876
[10]
SELECTIVE AREA GROWTH OF HIGH-QUALITY GAAS BY OMCVD USING NATIVE OXIDE MASKS
[J].
JONES, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Massachusetts, Amherst, MA,, USA, Univ of Massachusetts, Amherst, MA, USA
JONES, SH
;
LAU, KM
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Massachusetts, Amherst, MA,, USA, Univ of Massachusetts, Amherst, MA, USA
LAU, KM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(12)
:3149
-3155
←
1
2
3
→
共 25 条
[1]
CHEMICAL ETCHING OF INGAASP/INP DH WAFER
[J].
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
ADACHI, S
;
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
NOGUCHI, Y
;
KAWAGUCHI, H
论文数:
0
引用数:
0
h-index:
0
KAWAGUCHI, H
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(05)
:1053
-1062
[2]
SELECTIVE MOCVD EPITAXY FOR OPTOELECTRONIC DEVICES
[J].
AZOULAY, R
论文数:
0
引用数:
0
h-index:
0
AZOULAY, R
;
BOUADMA, N
论文数:
0
引用数:
0
h-index:
0
BOUADMA, N
;
BOULEY, JC
论文数:
0
引用数:
0
h-index:
0
BOULEY, JC
;
DUGRAND, L
论文数:
0
引用数:
0
h-index:
0
DUGRAND, L
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:229
-234
[3]
MOCVD OF INP AND MASS-TRANSPORT ON STRUCTURED INP SUBSTRATES
[J].
BLAAUW, C
论文数:
0
引用数:
0
h-index:
0
BLAAUW, C
;
SZAPLONCZAY, A
论文数:
0
引用数:
0
h-index:
0
SZAPLONCZAY, A
;
FOX, K
论文数:
0
引用数:
0
h-index:
0
FOX, K
;
EMMERSTORFER, B
论文数:
0
引用数:
0
h-index:
0
EMMERSTORFER, B
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:326
-333
[4]
STUDY AND APPLICATION OF THE MASS-TRANSPORT PHENOMENON IN INP
[J].
CHEN, TR
论文数:
0
引用数:
0
h-index:
0
CHEN, TR
;
CHIU, LC
论文数:
0
引用数:
0
h-index:
0
CHIU, LC
;
HASSON, A
论文数:
0
引用数:
0
h-index:
0
HASSON, A
;
YU, KL
论文数:
0
引用数:
0
h-index:
0
YU, KL
;
KOREN, U
论文数:
0
引用数:
0
h-index:
0
KOREN, U
;
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
;
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(05)
:2407
-2412
[5]
MOVPE GROWTH OF SIO2-MASKED INP STRUCTURES AT REDUCED PRESSURES
[J].
CLAWSON, AR
论文数:
0
引用数:
0
h-index:
0
CLAWSON, AR
;
HANSON, CM
论文数:
0
引用数:
0
h-index:
0
HANSON, CM
;
VU, TT
论文数:
0
引用数:
0
h-index:
0
VU, TT
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:334
-339
[6]
GALE RP, 1983, I PHYS C SER, V65, P101
[7]
SELECTIVE GROWTH OF GAAS IN THE MOMBE AND MOCVD SYSTEMS
[J].
HEINECKE, H
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
HEINECKE, H
;
BRAUERS, A
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
BRAUERS, A
;
GRAFAHREND, F
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
GRAFAHREND, F
;
PLASS, C
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
PLASS, C
;
PUTZ, N
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
PUTZ, N
;
WERNER, K
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
WERNER, K
;
WEYERS, M
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
WEYERS, M
;
LUTH, H
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
LUTH, H
;
BALK, P
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
BALK, P
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:303
-309
[8]
A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE
[J].
HERSEE, SD
论文数:
0
引用数:
0
h-index:
0
HERSEE, SD
;
BARBIER, E
论文数:
0
引用数:
0
h-index:
0
BARBIER, E
;
BLONDEAU, R
论文数:
0
引用数:
0
h-index:
0
BLONDEAU, R
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:310
-320
[9]
VERY LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE INGAASP/INP LASER-DIODES PREPARED BY 3-STAGE METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
ISHIGURO, H
论文数:
0
引用数:
0
h-index:
0
ISHIGURO, H
;
KAWABATA, T
论文数:
0
引用数:
0
h-index:
0
KAWABATA, T
;
KOIKE, S
论文数:
0
引用数:
0
h-index:
0
KOIKE, S
.
APPLIED PHYSICS LETTERS,
1987,
51
(12)
:874
-876
[10]
SELECTIVE AREA GROWTH OF HIGH-QUALITY GAAS BY OMCVD USING NATIVE OXIDE MASKS
[J].
JONES, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Massachusetts, Amherst, MA,, USA, Univ of Massachusetts, Amherst, MA, USA
JONES, SH
;
LAU, KM
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Massachusetts, Amherst, MA,, USA, Univ of Massachusetts, Amherst, MA, USA
LAU, KM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(12)
:3149
-3155
←
1
2
3
→