THE BREAKTHROUGH OF GALLIUM-ARSENIDE INTEGRATED-CIRCUITS

被引：0

作者：

KANEL, A

机构：

来源：

VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1985年 / 40卷 / 229期

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D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：567 / 571

页数：5

共 50 条

[1] GALLIUM-ARSENIDE INTEGRATED-CIRCUITS TECHNOLOGIES
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[2] PERSPECTIVE OF GALLIUM-ARSENIDE INTEGRATED-CIRCUITS
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[3] INTEGRATED-CIRCUITS USING GALLIUM-ARSENIDE
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[4] INTEGRATED-CIRCUITS - THE CASE FOR GALLIUM-ARSENIDE
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[5] GALLIUM-ARSENIDE DIGITAL INTEGRATED-CIRCUITS
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[6] GALLIUM-ARSENIDE - A NEW GENERATION OF INTEGRATED-CIRCUITS
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[7] COMPARISON OF SOS AND GALLIUM-ARSENIDE INTEGRATED-CIRCUITS
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[8] GALLIUM-ARSENIDE LARGE-SCALE INTEGRATED-CIRCUITS
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[9] GALLIUM-ARSENIDE FREQUENCY-DIVIDER INTEGRATED-CIRCUITS
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[10] PARASITIC EFFECTS AND THEIR IMPACT ON GALLIUM-ARSENIDE INTEGRATED-CIRCUITS
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