FAST SEMICONDUCTOR THERMOELECTRIC DEVICES

被引:26
作者
BIRKHOLZ, U
FETTIG, R
ROSENZWEIG, J
机构
[1] Univ Karlsruhe, Karlsruhe, West Ger, Univ Karlsruhe, Karlsruhe, West Ger
来源
SENSORS AND ACTUATORS | 1987年 / 12卷 / 02期
关键词
BISMUTH COMPOUNDS - Applications - RADIATION DETECTORS - Calculations - SEMICONDUCTOR DEVICES - Applications - THERMOCOUPLES - Fabrication;
D O I
10.1016/0250-6874(87)85015-1
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The parameters of a thermoelectric radiation detector on a Bi//2Te//3 basis were calculated. Maximum specific detectivity requires a special geometric relation between the receiver area and the thermocouple leg dimensions. To obtain a response time in the millisecond range, thermocouple legs approximately 100 mu m long have to be produced. A flash evaporation equipment for the preparation of small thermocouples was developed, allowing the deposition of films up to 200 mu m thick. Semiconductor alloys of the system Bi//2// minus //xSb//xTe//3// plus //y were used for p- and n-type legs. A microthermocouple with film thickness of 100 mu m exhibited a response time of 10 ms when used as a Peltier element.
引用
收藏
页码:179 / 184
页数:6
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