DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON

被引：106

作者：

FAIR, RB ^{[1
]}

TSAI, JCC ^{[1
]}

机构：

[1] BELL TEL LABS INC, READING, PA 19603 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 12期

关键词：

D O I：

10.1149/1.2134111

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1689 / 1696

页数：8

共 34 条

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[8] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

FAIR, RB ;

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[9] COOPERATIVE EFFECTS BETWEEN ARSENIC AND BORON IN SILICON DURING SIMULTANEOUS DIFFUSIONS FROM ION-IMPLANTED AND CHEMICAL SOURCE PREDEPOSITIONS [J].

FAIR, RB .

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[10] QUANTITATIVE THEORY OF RETARDED BASE DIFFUSION IN SILICON N-P-N STRUCTURES WITH ARSENIC EMITTERS [J].

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