DEPENDENCE OF THRESHOLD FIELD ON INTERVALLEY SEPARATION IN TRANSFERRED ELECTRON OSCILLATORS

被引：8

作者：

BUTCHER, PN

FAWCETT, W

HILSUM, C

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：192 / &

共 9 条

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FAWCETT, W
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[3] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS
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FAWCETT, W
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &
[4] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
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[5] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS
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[6] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT
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FELDMAN, WL
[J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +
[7] KING GSD, PRIVATE COMMUNICATIO
[8] STRATTON R, 1958, P PHYS SOC LONDON, VA246, P406
[9] WASSE MP, PRIVATE COMMUNICATIO