FAST NONRADIATIVE RECOMBINATION IN SPUTTERED A-SI-H

被引：22

作者：

COLLINS, RW ^{[1
]}

VIKTOROVITCH, P ^{[1
]}

WEISFIELD, RL ^{[1
]}

PAUL, W ^{[1
]}

机构：

[1] HARVARD UNIV,GORDON MCKAY LAB,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.6643

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6643 / 6648

页数：6

共 16 条

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[8] LUMINESCENCE AND NON-RADIATIVE DECAY IN SPUTTERED AMORPHOUS SI-H [J].

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[10] FAST RADIATIONLESS RECOMBINATION IN AMORPHOUS SILICON [J].

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