CALCULATION OF INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE

被引：233

作者：

HANSEN, GL ^{[1
]}

SCHMIT, JL ^{[1
]}

机构：

[1] HONEYWELL INC,CTR CORP TECHNOL,BLOOMINGTON,MN 55420

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.332153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1639 / 1640

页数：2

共 9 条

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[6] TEMPERATURE AND ALLOY COMPOSITIONAL DEPENDENCES OF ENERGY GAP OF HG1-XCDXTE [J].

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[7] INTRINSIC CARRIER CONCENTRATION OF HG1-CHICDCHITE AS A FUNCTION OF CHI AND T USING K-P CALCULATIONS [J].

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[8]

WEILER M, COMMUNICATION

[9]

Weiler M. H., 1981, SEMICONDUCT SEMIMET, V16, P119

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