CHEMICAL ETCHING OF INGAASP/INP DH WAFER

被引：54
作者：
ADACHI, S
NOGUCHI, Y
KAWAGUCHI, H
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 05期
关键词：
D O I：
10.1149/1.2124014
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1053 / 1062
页数：10
相关论文
共 42 条
[1]   INGAASP-INP PLANAR-STRIPE LASERS FABRICATED BY WET CHEMICAL ETCHING [J].
ADACHI, S ;
KAWAGUCHI, H .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3176-3178
[2]   CHEMICAL ETCHING CHARACTERISTICS OF (001)INP [J].
ADACHI, S ;
KAWAGUCHI, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1342-1349
[3]   A NEW ETCHANT SYSTEM, K2CR2O7-H2SO4-HCL,FOR GAAS AND INP [J].
ADACHI, S ;
KAWAGUCHI, H ;
IWANE, G .
JOURNAL OF MATERIALS SCIENCE, 1981, 16 (09) :2449-2456
[4]   CHEMICAL ETCHING OF INP AND INGAASP INP [J].
ADACHI, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) :609-613
[5]  
ALFEROV ZI, 1976, SOV PHYS-TECH PHYS, V20, P1617
[6]  
[Anonymous], 1978, HETEROSTRUCTURE LASE
[7]   SINGLE-MODE POSITIVE-INDEX GUIDED CW CONSTRICTED DOUBLE-HETEROJUNCTION LARGE-OPTICAL-CAVITY ALGAAS LASERS WITH LOW THRESHOLD-CURRENT TEMPERATURE SENSITIVITY [J].
BOTEZ, D ;
CONNOLLY, JC .
APPLIED PHYSICS LETTERS, 1981, 38 (09) :658-660
[8]   COMPONENTS FOR OPTICAL COMMUNICATIONS-SYSTEMS - A REVIEW [J].
BOTEZ, D ;
HERSKOWITZ, GJ .
PROCEEDINGS OF THE IEEE, 1980, 68 (06) :689-731
[9]  
BUTTER E, 1973, KRIST TECH, V8, P1021
[10]  
FURWITZ CE, 1975, APPL PHYS LETT, V27, P241
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