ELECTRICAL CHARACTERIZATION OF THE THERMALLY OXIDIZED SIO2/SIC INTERFACE

被引：0

作者：

SHENOY, JN ^{[1
]}

LIPKIN, LA ^{[1
]}

CHINDALORE, GL ^{[1
]}

PAN, J ^{[1
]}

COOPER, JA ^{[1
]}

PALMOUR, JW ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] CREE RES INC,DURHAM,NC 27713

来源：

COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期

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D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We use a room temperature photo-CV technique and a high-temperature simultaneous hi-lo CV technique to characterize the thermally oxidized p-type 6H-SiC/SiO2 interface in terms of fixed oxide charge, interface state density, and the density of near-interface oxide traps. Results on both aluminum and boron doped epilayers are reported.

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页码：449 / 454

页数：6

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