FABRICATION OF A GAAS-ON-INP, 4 CHANNEL VARIABLE BANDWIDTH OPTICAL RECEIVER, OPTOELECTRONIC INTEGRATED-CIRCUIT (OEIC), USING A SEEDED-MASK TECHNOLOGY

A monolithic GaAs-on-InP, four channel, variable bandwidth, photo-receiver has been fabricated. This is the first application of a seeded mask technology, to improve the characteristics of patterned growth of integrated optical and electronic devices. This approach, which is compatible with atmospheric pressure MOVPE growth, may also be applied to lattice matched electronics or other optical components, e.g. lasers and waveguides. High frequency data from these fully functional OEICs is reported.